| PART |
Description |
Maker |
| 7N70 7N70-TF3-T 7N70L-TF3-T |
7 Amps, 700 Volts N-CHANNEL POWER MOSFET 7 A, 700 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| MA4EX950M-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| OSC-13SH OSC-1.3SH |
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 纭??灏??????朵?绠?Ic: 700 mA,Vce: 30 V))
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 硅型射频功率晶体Ic: 700 mA,Vce: 30 V))
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
| Z4GP210-HF |
Lead less chip form, no lead damage, Low power loss, High efficiency
Halogen Free Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>AV</sub>=2A
|
Comchip Technology
|
| SF47 SF49 SF48 SF410 |
POWER RECTIFIERS(4.0A,500-1000V)
POWER RECTIFIERS(4.0A500-1000V)
POWER RECTIFIERS(4.0A /500-1000V)
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| APT1001R1BN APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
LJT 56C 48#20 8#16 PIN RECP
Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No N沟道增强型高压功率MOSFET
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| GBU410-G |
Bridge Rectifiers, V-RRM=1000V, V-DC=1000V, I-(AV)=4A
|
Comchip Technology
|
| BU705D |
2.5 A, 700 V, NPN, Si, POWER TRANSISTOR
|
NXP SEMICONDUCTORS
|
| APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM
|
Advanced Power Technology
|
| APT1004 APT1004RCN |
POWER MOS IV 1000V 3.6A 4.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT1004RGN |
POWER MOS IV 1000V 3.3A 4.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
